发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
PURPOSE: A semiconductor device and a method for manufacturing the same are provided to minimize leakage current by increasing a length of circumference of isolation. CONSTITUTION: A semiconductor device comprises a semiconductor substrate(21), an isolation layer(28a), a gate electrode(29), and a source/drain region. The isolation layer(28a) has a trapezoid shape. The isolation layer(28a) is formed within a trench. The gate electrode(29) is formed on an active region of the semiconductor substrate(21). The source/drain region is formed on the substrate(21) of both sides of the gate electrode(29). The isolation layer(28a) comprises an insulating layer for isolating devices and a sidewall formed at both sides of the insulating layer.
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申请公布号 |
KR100259083(B1) |
申请公布日期 |
2000.06.15 |
申请号 |
KR19970061153 |
申请日期 |
1997.11.19 |
申请人 |
HYUNDAI MICRO ELECTRONICS CO., LTD. |
发明人 |
SHIM, PIL-BO |
分类号 |
H01L27/04;(IPC1-7):H01L27/04 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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