| 摘要 |
PURPOSE: A semiconductor memory device with static burn-in test circuit is provided to supply a stress voltage of a cell by adapting a static burn-in test circuit to multi-bit flash memory device and to enable a high voltage supply part to operate stably by separating the high voltage supply part in normal operation in order to increase the credit of element. CONSTITUTION: A semiconductor memory device with static burn-in test circuit comprises a cell array part which includes a plurality of cells, a high voltage supply part which supplies high voltage when reading, programming and erasing cells, an address buffer and n precharge part which receives and buffers an external address and precharges bit line, a low decode part which controls word line of the cell array part according to address outputted from the address buffer and precharge part, a column decode part which controls column gate and sense amplifier according to the address buffer and precharge part, a data input/output buffer part which connects a data of cell with the outside when programming and reading cells and a static burn-in test part which provides a control voltage to the low decode part in the static burn-in test.
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