| 摘要 |
During critical plasma etching steps, the wafer's surface is illuminated with electromagnetic radiation in the visible and/or in UV spectrum of energy and power density sufficient to enhance the reverse current through protective junctions that are commonly realized for providing electrical discharge paths for electrical charges picked up by exposed conductive parts to limit the level of induced voltages to values compatible with the preservation of the integrity of functional dielectric layers coupled to the exposed conductors parts and to the semiconductor substrate or to another conductive part. <IMAGE> |
