Method of forming a contact of a semiconductor device

摘要

The present invention relates to a method of forming a contact of a semiconductor device, and more particularly, to a method of forming a contact of a semiconductor device that can improve the process yield of the device and reliability by simplifying the process of forming the contact hole of the top conductive layer without removing the etching barrier layer of the portion on which the contact hole of the top conductive layer is to be formed when a storage electrode contact is formed, where the contact hole of the top conductive layer is formed on the top of the bottom conductive layer, which refers to a process of forming the self-alignment contact.