SEMICONDUCTOR MEMORY DEVICE HAVING MULTI-BANK STRUCTURE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor memory device of a multi-bank structure improving chip efficiency. SOLUTION: The array of the semiconductor memory device 100 is separated to plural banks 120, and respective banks are provided with plural memory cells for storing information. The semiconductor memory device 100 is provided with a selection signal generation circuit 160 and a voltage boost circuits 140-146 further. The selection signal generation circuit 160 generates successively a selection signal according to a clock signal, and respective voltage boost circuits generate a high voltage supplied to at least one selected bank according to the corresponding selection signal during normal operation. The number of voltage boost circuits is less than the number of banks.