发明名称 RESIST MASK REMOVING METHOD AND APPARATUS THEREFOR, TRANSISTOR AND LIQUID CRYSTAL PANEL MANUFACTURING METHOD
摘要 <p>PROBLEM TO BE SOLVED: To provide a method of removing a resist mask, which does not require chemicals to be used and a large of cost and can surely remove a residue of the resist mask in a contact hole and a resist mask after introduction of impurity within a short period of time, a method of manufacturing transistor and a liquid crystal panel using the same method and a resist mask removing apparatus. SOLUTION: On the occasion of removing a resist mask formed on a substrate, after the resist mask is decomposed through irradiation of the plasma 340 from a plasma gun 370 to the substrate P under the atmospheric condition within the plasma radiating chamber of the resist removing apparatus 1, residue of the resist mask is washed out from the substrate P with water.</p>
申请公布号 JP2000150475(A) 申请公布日期 2000.05.30
申请号 JP19980320488 申请日期 1998.11.11
申请人 SEIKO EPSON CORP 发明人 GYODA KOZO;KITAWADA KIYOBUMI;MIYAJIMA HIROO
分类号 H01L21/302;G02F1/1333;G02F1/136;G02F1/1368;H01L21/304;H01L21/3065;(IPC1-7):H01L21/306;G02F1/133 主分类号 H01L21/302
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