发明名称 |
RESIST MASK REMOVING METHOD AND APPARATUS THEREFOR, TRANSISTOR AND LIQUID CRYSTAL PANEL MANUFACTURING METHOD |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method of removing a resist mask, which does not require chemicals to be used and a large of cost and can surely remove a residue of the resist mask in a contact hole and a resist mask after introduction of impurity within a short period of time, a method of manufacturing transistor and a liquid crystal panel using the same method and a resist mask removing apparatus. SOLUTION: On the occasion of removing a resist mask formed on a substrate, after the resist mask is decomposed through irradiation of the plasma 340 from a plasma gun 370 to the substrate P under the atmospheric condition within the plasma radiating chamber of the resist removing apparatus 1, residue of the resist mask is washed out from the substrate P with water.</p> |
申请公布号 |
JP2000150475(A) |
申请公布日期 |
2000.05.30 |
申请号 |
JP19980320488 |
申请日期 |
1998.11.11 |
申请人 |
SEIKO EPSON CORP |
发明人 |
GYODA KOZO;KITAWADA KIYOBUMI;MIYAJIMA HIROO |
分类号 |
H01L21/302;G02F1/1333;G02F1/136;G02F1/1368;H01L21/304;H01L21/3065;(IPC1-7):H01L21/306;G02F1/133 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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