| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a tantalum oxide film having high permittivity and reduced leakage current suitable for use in high density DRAM. SOLUTION: A tantalum oxide film is produced by depositing a tantalum film 105, heat treating the tantalum film 105 at a first temperature and then further heat treating the tantalum film 105 at a second temperature lower than the first temperature in an atmosphere containing active oxygen.
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