High voltage semiconductor structure,申请号US19980108962-传众专利搜索

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发明名称	High voltage semiconductor structure
摘要	A high voltage MOSFET with low on-resistance and a method of lowering the on-resistance for a specific device breakdown voltage of a high voltage MOSFET. The MOSFET includes a blocking layer of a first conductivity type having vertical sections of a second conductivity type or the blocking layer may include alternating vertical sections of a first and second conductivity type.
申请公布号	US6066878(A)	申请公布日期	2000.05.23
申请号	US19980108962	申请日期	1998.07.02
申请人	INTERSIL CORPORATION	发明人	NEILSON, JOHN M. S.
分类号	H01L29/06;H01L29/10;H01L29/78;(IPC1-7):H01L29/78	主分类号	H01L29/06
代理机构		代理人
主权项
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