发明名称 |
Method of manufacturing semiconductor devices using a crystallization promoting material |
摘要 |
In a method of manufacturing a semiconductor device, an insulating film having an opening is formed on an amorphous film 103 containing silicon therein. After catalytic elements are introduced from the opening, the amorphous film 103 is crystallized. Thereafter elements (phosphorus) selected from Group XV are introduced from the opening, and then a heat treatment is conducted to obtain a film having crystallinity. Thereafter, a portion of the film containing silicon into which the catalytic elements and phosphorus is introduced are removed.
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申请公布号 |
US6066518(A) |
申请公布日期 |
2000.05.23 |
申请号 |
US19980119779 |
申请日期 |
1998.07.21 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI, SHUNPEI |
分类号 |
H01L21/20;G02F1/1362;H01L21/336;H01L21/77;H01L21/84;H01L29/786;(IPC1-7):H01L21/84 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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