Methode zur Reduzierung des Leckstroms in Dünnfilmtransistoren,申请号DE1994620499T-传众专利搜索

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发明名称	Methode zur Reduzierung des Leckstroms in Dünnfilmtransistoren
摘要
申请公布号	DE69420499(T2)	申请公布日期	2000.05.18
申请号	DE1994620499T	申请日期	1994.09.30
申请人	GENERAL ELECTRIC CO., SCHENECTADY	发明人	KWASNICK, ROBERT FORREST;POSSIN, GEORGE EDWARD
分类号	H01L21/324;H01L21/336;H01L29/78;H01L29/786;(IPC1-7):H01L21/336	主分类号	H01L21/324
代理机构		代理人
主权项
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