发明名称 |
Deposition method for heteroepitaxial diamond |
摘要 |
A method for the growth of diamond on a substrate combines an ECR (Electron cyclotron resonance) MPCVD (Microwave plasma chemical vapor deposition) method with a MPCVD method in one system. A two-step diamond growing method comprises firstly etching and nucleation performed by the ECR method and then diamond grown by the microwave plasma CVD method. Not only are high quality continuous polycrystalline diamond films on silicon wafer obtained but also heteroepitaxial growth has been achieved in the present invention. Auger electron spectroscopy (AES), scanning electron microscopy (SEM) and Raman spectroscopy have been used to characterize the structure and morphology of the synthesized diamond films.
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申请公布号 |
US6063187(A) |
申请公布日期 |
2000.05.16 |
申请号 |
US19970910746 |
申请日期 |
1997.08.13 |
申请人 |
CITY UNIVERSITY OF HONG KONG |
发明人 |
LEE, SHUIT TONG;LEE, CHUN SING;LAM, YAT WAH;LIN, ZHANGDA |
分类号 |
C30B25/10;(IPC1-7):C30B29/04 |
主分类号 |
C30B25/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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