| 摘要 |
PROBLEM TO BE SOLVED: To improve work efficiency with a manufacturing device by preventing metal particles deposited on the inner wall of the manufacturing device by etching with the metal film from peeling. SOLUTION: An RF power source 5 is a high-frequency power source for high-frequency etching in a chamber 1. On a holder 3, a semiconductor wafer 2 where a metal film which is to be etched is formed is placed, a ring 4 surrounding the semiconductor wafer 2 is placed on the holder 3. A silicon oxide film which is etched, together with at the same time, the metal film is formed on the ring 4 for the metal particles bonded to the inside wall of the manufacturing device so that no metal particles caused by etching will not peel off from the inside wall of the manufacturing device.
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