| 摘要 |
PROBLEM TO BE SOLVED: To prevent ions from penetrating a gate electrode without causing damages due to ion implantation to a gate oxide film, when performing the ion implantation to form a source region and a drain region. SOLUTION: There is provided a method of manufacturing a MOS semiconductor device with a gate electrode of polysilicon. This method comprises the steps of forming a polysilicon film 6 on a gate oxide film 5, forming a polysilicon oxide film 8 on the polysilicon film 6, and heat-treating the polysilicon film 6 to grow crystal grain from the gate oxide film 5 and the polysilicon oxide film 8.
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