发明名称 |
SURFACE-EMITTING SEMICONDUCTOR LASER |
摘要 |
A surface-emitting semiconductor laser, in which both an active layer and a current-constricting layer near the active layer are sandwiched between two reflecting mirror layer structures. The current-constricting layer is made of AlInAs, has an oxide region formed in its periphery, and operates with a low-threshold current, thereby realizing continuous operation at high temperatures.
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申请公布号 |
WO0027003(A1) |
申请公布日期 |
2000.05.11 |
申请号 |
WO1999JP06137 |
申请日期 |
1999.11.04 |
申请人 |
THE FURUKAWA ELECTRIC CO., LTD.;MUKAIHARA, TOSHIKAZU;IWAI, NORIHIRO;KASUKAWA, AKIHIKO |
发明人 |
MUKAIHARA, TOSHIKAZU;IWAI, NORIHIRO;KASUKAWA, AKIHIKO |
分类号 |
H01S5/183;H01S5/323;(IPC1-7):H01S5/223 |
主分类号 |
H01S5/183 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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