| 摘要 |
<p>In a semiconductor device comprising a conductive pad (100a) and a semiconductor chip (100b) soldered to the conductive pad, the semiconductor chip includes a substrate (1), a first electrode (3a or 3b) disposed on the front surface of the substrate, a dome-shaped via-hole (6) formed in the substrate and contacting the first electrode, and a second electrode (7) covering the rear surface of the substrate and the internal surface of the via-hole. The semiconductor chip is soldered to the conductive pad so that a space (13) is formed between the internal surface of the via-hole and the solder (8). The space is prescribed by a distance (d) from the bottom of the via-hole in the direction perpendicular to the surface of the substrate, and the distance (d) is represented by &lt;MATH&gt; where x is the depth of the via-hole, y is the rupture stress of the semiconductor substrate, E1 is the Young's modulus of a semiconductor material of the substrate, E2 is the Young's modulus of a material of the solder, alpha 1 is the linear expansion coefficient of the semiconductor material, alpha 2 is the linear expansion coefficient of the solder material, and DELTA T is a difference between the die-bonding temperature and the room temperature. &lt;IMAGE&gt;</p> |
