| 摘要 |
PROBLEM TO BE SOLVED: To obtain an amplification type solid-state image sensing device of low noise and high sensitivity by forming recessed and projecting shapes in a region wherein a unit picture element is arranged second-dimensionally and forming a photodiode inside a semiconductor board wherein as projection shape is formed in a semiconductor surface. SOLUTION: A projection part is formed in a surface of a p-type semiconductor board 1 and an n-type impurity region for forming a buried photodiode is formed in a projection region. A projection part of a surface of the p-type semiconductor board 1 is formed by anisotropically etching a p-type semiconductor board 2 and a step S of irregular structure is formed. An impurity layer for a buried photodiode is formed by ion implantation of phosphorus in an n-type impurity region 4 and by ion implantation of arsenic in the p-type impurity region 3. A transfer gate 3 is processed and formed by depositing a gate electrode after heat oxidation of a surface of the p-type semiconductor board 1 and combining etching. As a result, an amplification type solid-state image sensing device of high sensitivity and low noise can be obtained.
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