| 摘要 |
PROBLEM TO BE SOLVED: To enable maintaining low roughness in the atomic order in addition to high washing effect of metals, organic matters, and fine particles by washing electronic material with oxidizing washing liquid and washing it with reducing washing liquid while giving ultrasonic vibration. SOLUTION: At the time of removing contaminants such as fine particles stuck on the surface of electronic material such as a silicon substrate for a semiconductor, after the electronic material is washed with oxidizing washing liquid, it is treated so that it is washed with reducing washing liquid while giving ultrasonic vibration. The oxidizing washing liquid is water solution that oxidizing material is dissolved in water, and the oxidizing material is not particularly limited, and oxidizing material such as hydrogen peroxide, ozone, and oxygen, hypochlorite such as calcium hypochlorite, or the like can be cited. The reducing washing liquid is that in which reducing material is dissolved in water, and the reducing material is not particularly limited and reducing gas such as gaseous hydrogen, hyposulfite such as sodium hyposulfite, or the like can be cited.
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