| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a thin film of a semiconductor oxide film, wherein an interface between an oxide film and a semiconductor is made further flat and uniform. SOLUTION: In the forming method of a semiconductor oxide film for oxidizing a modified semiconductor surface through chemical reaction between water vapor and oxygen gas and forming a multilayer oxide film of atomic level, first a surface first layer is oxidized by water vapor, and thereafter oxidation reaction is performed for every layer from a surface by using gas which does not react on a semiconductor and oxygen molecule gas or oxygen molecule gas alone as atmosphere. Whenever oxidation reaction finishes every layer, the partial pressure ratio of oxygen molecule gas to gas which does not react on a semiconductor or temperature of a semiconductor surface, or both thereof are raised as the oxide film grows.
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