| 摘要 |
PROBLEM TO BE SOLVED: To provide a dielectric layer etching processing method which does not damage a silicon substrate in a bottom part of a contact point opening. SOLUTION: A polysilicon layer 4 is formed on a dielectric layer 1, a photoresist mask layer 5 is formed on the polysilicon layer 4, the photoresist mask layer 5 is used as an etching mask, which selectively removes the polysilicon layer 4 to etch the polysilicon layer 4, the photoresist layer 5 is removed from the polysilicon layer 4, by use of the polysilicon layer 4 as a mask, the dielectric layer 1 is etched, and next the polysilicon layer 4 is converted into an etched transition metal silicide layer, so that the transition metal silicide layer is selectively removed from on the dielectric layer 1.
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