发明名称 DATA SENSING DEVICE OF FLASH MEMORY
摘要 PURPOSE: A data sensing device of a flash memory is provided to reduce an error rate by adjusting a load value of a reference cell. CONSTITUTION: In a data sensing device of a flash memory, a main cell load part(35) adjusts a load of a main cell bias part which applies a bias to a main cell. A reference cell load part(30) adjusts a load of a reference cell bias part which applies a bias to a reference cell. A load rate setting part(40) sets a load value of the reference cell load part according to a verification state and a normal state. A load rate adjusting part(60) adjusts a load value of the reference cell load part. A sense amplifier(50) senses a differential between currents flowing into the reference cell load part and currents flowing into the main cell bias part.
申请公布号 KR20000020230(A) 申请公布日期 2000.04.15
申请号 KR19980038748 申请日期 1998.09.18
申请人 HYUNDAI ELECTRONICS IND. CO., LTD. 发明人 LEE, SEUNG JIN
分类号 G11C7/06;(IPC1-7):G11C7/06 主分类号 G11C7/06
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