发明名称 |
DATA SENSING DEVICE OF FLASH MEMORY |
摘要 |
PURPOSE: A data sensing device of a flash memory is provided to reduce an error rate by adjusting a load value of a reference cell. CONSTITUTION: In a data sensing device of a flash memory, a main cell load part(35) adjusts a load of a main cell bias part which applies a bias to a main cell. A reference cell load part(30) adjusts a load of a reference cell bias part which applies a bias to a reference cell. A load rate setting part(40) sets a load value of the reference cell load part according to a verification state and a normal state. A load rate adjusting part(60) adjusts a load value of the reference cell load part. A sense amplifier(50) senses a differential between currents flowing into the reference cell load part and currents flowing into the main cell bias part.
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申请公布号 |
KR20000020230(A) |
申请公布日期 |
2000.04.15 |
申请号 |
KR19980038748 |
申请日期 |
1998.09.18 |
申请人 |
HYUNDAI ELECTRONICS IND. CO., LTD. |
发明人 |
LEE, SEUNG JIN |
分类号 |
G11C7/06;(IPC1-7):G11C7/06 |
主分类号 |
G11C7/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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