| 摘要 |
PROBLEM TO BE SOLVED: To provide a memory element, in which information can be maintained for a long period even when it is manufactured at a low temperature, a manufacturing method of the memory element and an integrated circuit. SOLUTION: A memory transistor 20 and a selection transistor 30 are formed on a substrate 11 composed of glass, etc., through a silicon nitride film 12 and a silicon dioxide film 13. Said memory transistor 20 and the selection transistor 30 are series connected to the second impurity region 23. The memory conduction region 21 of the memory transistor 20 is composed of non-single crystal silicon, and an accumulation region 24 is composed of fine powder consisting of dispersed non-single crystal silicon. Accordingly, an electric charge can be partially maintained even when a defect is present on a tunnel insulating film 25. Said tunnel insulating film 25 is formed by exposing the surface of the memory conduction region 21 to ionized gas containing oxygen atoms. As a result, the memory element can be manufactured at a low temperature.
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