SEMICONDUCTOR DEVICE, SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURE THEREOF, AND FORMING METHOD OF NITRIDE SEMICONDUCTOR LAYER

摘要

PROBLEM TO BE SOLVED: To provide a nitride semiconductor light emitting device which is capable of operating on a low voltage and possessed of edge faces that can be formed by cleavage, and a manufacturing method thereof. SOLUTION: A GaN layer is formed on a sapphire substrate, an SiO2 film is formed on the GaN layer, and then a GaN semiconductor layer 18 that includes an MQW light emitting layer 8 is grown on the GaN layer and the SiO2 layer through a lateral growth technique. The GaN semiconductor layer is removed from the sapphire substrate except from a region on the SiO2 film, then a P electrode 13 is formed on the top surface of the GaN semiconductor layer 18 on the SiO2 film, and the P electrode 13 is joined to an ohmic electrode 15a on the GaAs substrate 14. An N electrode 17 is formed on the top surface of the GaA semiconductor layer 18.