| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor causing no discrepancy of electric characteristics due to conductive parts not exposing to the edges of element isolating regions. SOLUTION: After the formation of element isolating regions 13 encircling an active region 14 by selective oxidizing process using an oxide film growth suppressing mask 12 on a semiconductor substrate 10, the gaps 15 made between the edges of the element isolating regions 13 and the semiconductor substrate 10 are filled with an electric insulating material and then an element having conductive parts 13a extending from the active region 14 to the element isolating regions l3 is formed on the active region 14.
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