发明名称 SURFACE TREATING DEVICE
摘要 PROBLEM TO BE SOLVED: To make the distribution of radicals of gaseous raw material uniform on a substrate, to make the film thickness on the substrate uniform and to eliminate trouble, such as unnecessary heat transfer to a reduction/expansion nozzle which can occur in the structure of the nozzle and film formation in the nozzle, by surely ejecting supersonic flow from the nozzle. SOLUTION: The gaseous raw material 7 and carrier gas 8 which are formed as plasma and are excited from the blowout port 10a of the plug nozzle 10 is ejected toward a plug slope 2a and are expanded along the conical slope of the plug 1. The streams of the gases 7, 8 intersect with each other at one point at the front end of the plug 2 and thereafter, the gases are introduced in the form of the supersonic plasma flow 11 uniform in the distribution of pressure into the substrate 5 arranged downstream of the plug nozzle 10. This flow collides against the substrate 5 and a film 6 is deposited thereon.
申请公布号 JP2000096247(A) 申请公布日期 2000.04.04
申请号 JP19980268405 申请日期 1998.09.22
申请人 KOMATSU LTD 发明人 KITAHASHI MASAMITSU
分类号 B05D1/02;C23C16/27;C23C16/50;C23C16/503;C23C16/511;C30B25/02;C30B25/14;H01L21/205;H05H1/34 主分类号 B05D1/02
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