| 摘要 |
PROBLEM TO BE SOLVED: To provide the method for manufacturing a semiconductor device, in which the level difference produced between an element forming region and an element isolation region can be reduced and which is provided with an inexpensive element isolation insulating film having high element isolation cability. SOLUTION: In a method for manufacturing semiconductor devices, an element isolation insulating film 30 is formed in an element isolation recessed section 22a through thermal oxidation, after the recessed section 22a has been formed on the surface of a substrate 22 through wet etching. Consequently, the level difference produced between the surface of an active region 23 and an upper surface 30a of the insulating film 30 can be reduced. In addition, the possibility of deteriorating the element isolation cability of the insulating film 30 is reduced for the reason that such damages as lattice defect, etc., are hard to occur in the substrate, and so on. In addition, the process of this method is relatively simple, because only the steps of forming the recessed section 22a and forming the insulating film 30 are added to the process of the normal localized oxidation of silicon(LOCOS) method.
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