| 摘要 |
PROBLEM TO BE SOLVED: To enhance an activation process in efficiency by a method wherein impurities are introduced into a semiconductor region by irradiation with high- speed ions, an insulating film is removed except from a part below a gate electrode, and thereafter the semiconductor region is exposed and irradiated with a laser beam. SOLUTION: For instance, a silicon oxide film 104 is deposited as a gate insulating film. Thereafter, a gate electrode 105 is anodized, and an anodic oxide 106 is formed on the top surface and side surface of the gate electrode and a wiring. Thereafter, impurities are injected into an island-like semiconductor 103 in a self-aligned manner by irradiating it with a flow of impurity and hydrogen plasma, whereby an impurity region (to serve as a source, a drain) 107 is formed. Then, the surface of the impurity region 107 is exposed. Furthermore, the semiconductor region 107 that deteriorates in crystallinity due to injection of impurities is irradiated with a laser beam to recover its crystallinity. Thereafter, an interlayer insulator 108 is deposited, a contact hole is provided to it, and source/drain electrodes 109 are formed, and thus the formation of a semiconductor device is finished.
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