| 摘要 |
An integrated circuit has a guard ring for shielding a first area (14) (e.g. high voltage area) from a second area (15) (e.g. low voltage). The guard ring comprises a conductive guard ring (6), (e.g. metal), which is partially exposed through a passivation layer (13) in the integrated circuit (1). A semiconductor guard ring (8), (e.g. silicon), is isolated from the first and second areas of semiconductor by at least two trench rings (16), one located on each side of the semiconductor guard ring (8). A plurality of conductive elements (comprising a metal connection plate (18) and via (19)) connect the conductive guard ring (6) and the semiconductor guard ring (8) at spaced apart intervals. The ocnductive guard ring (6), semiconductor guard ring (8) and conductive elements are all connected to a ground source. If high energy particles move from the first area towards the second area, they are attracted to the exposed metal, and their charge is conducted to ground. |
