METHOD FOR FABRICATING GATE OXIDE OF MOS TRANSISTOR

摘要

PURPOSE: The method improves the device characteristics of a MOS transistor by suppressing the impurity injection into a gate oxide(110) by a hot carrier phenomenon. CONSTITUTION: The method improves the film quality of the gate oxide, and improves the diode leakage current characteristics, and prevents the hot carrier characteristics deterioration phenomenon at the gate oxide and suppresses the impurity injection to the gate oxide by a hot carrier phenomenon, by; injecting nitrogen ion of 2.0E12 or 5.0E14 with the ion injection energy of 5KeV or 10KeV onto a pad oxide on top of a semiconductor substrate(101); and generating a nitride oxide on bottom of the gate oxide by thermal growth of the gate oxide and removing the pad oxide after diffusing the nitrogen ion over the channel region surface layer of the semiconductor substrate with rapid thermal annealing for 15 or 30 seconds in the temperature of 1000 or 1050°C.