发明名称 DATA INPUT/OUTPUT CIRCUIT FOR A SEMICONDUCTOR MEMORY
摘要 PURPOSE: A data input/output circuit for a semiconductor memory is provided, which minimizes a load of a data line for transmitting data of a semiconductor memory cell to a sense amplifier. CONSTITUTION: The data input/output circuit for a semiconductor memory comprises: memory units (21, 22) for selecting a corresponding cell by a column address and a row address; transmission gates (23, 24) for transmitting data of the selected cell of memory units (21, 22); a sense amplifier (25) for amplifying data transmitted from transmission gates (23, 24); and a writ driving unit (26) for writing an external data to the selected cell of memory units (21, 22). Thereby, it is possible to improve the performance of the sense amplifier and prevent the performance decrease of the sense amplifier.
申请公布号 KR20000014491(A) 申请公布日期 2000.03.15
申请号 KR19980033957 申请日期 1998.08.21
申请人 HYUNDAI MICRO ELECTRONICS CO.,LTD. 发明人 LEE, JAE KU
分类号 G11C7/00;G11C7/06;G11C7/10;(IPC1-7):G11C7/00 主分类号 G11C7/00
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