| 摘要 |
PURPOSE: A fabrication method of semiconductor devices is provided to improve an effect channel length and prevent a GIDL(gate induced drain leakage) by forming an LDD region being not overlap to a gate. CONSTITUTION: The method comprises the steps of simultaneously forming a field oxide (33) and a sacrificial layer (35) in a field region and an active region of a silicon substrate (31), respectively; flattening the protrusion portion of the field oxide (33) and the sacrificial layer (35); forming a source and a drain regions (37,38) by implanting impurity ions; forming a trench (39) by etching the center portion of the sacrificial layer (35); forming a gate (43) in the trench (39), wherein a portion of the gate (43) is overlapped to the remained sacrificial layer (35) in the drain region (38); removing the remained sacrificial layer (35) and implanting the exposed source and drain regions (37, 38) symmetrically formed each other, thereby forming an LDD region (45).
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