发明名称 |
Semiconductor device and method of manufacturing the same |
摘要 |
A semiconductor device includes spaced apart source and drain regions formed in a semiconductor substrate and a gate electrode insulatively spaced from a channel region between the source region and the drain region by a gate insulating film. Insulating layers are respectively formed between the source region and the channel region and between the drain region and the channel region.
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申请公布号 |
US6037605(A) |
申请公布日期 |
2000.03.14 |
申请号 |
US19970914123 |
申请日期 |
1997.08.19 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
YOSHIMURA, HISAO |
分类号 |
H01L21/336;H01L29/06;H01L29/08;(IPC1-7):H01L29/06;H01L29/788 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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