| 摘要 |
PROBLEM TO BE SOLVED: To improve output of a nitride semiconductor element, lower forward voltage and the threshold voltage and improve electrostatic breakdown strength characteristic by providing a superlattice layer wherein a plurality of layers including first and second nitride semiconductor layers of which one layer at least is doped with n-type impurities are laminated between a substrate and an active layer. SOLUTION: A nitride semiconductor light emitting element has a superlattice structure which is formed between an active layer 6 and a substrate 1 and wherein a first nitride semiconductor layer 4a and a second nitride semiconductor layer 4b are laminated alternately in an n-electrode formation layer 4 wherein an n-electrode is formed. Therefore, an n-electrode formation layer is made a layer of good crystallinity. Furthermore, its resistance can be made low and a forward voltage Vf of a light emitting element can be made low. In this case, crystallinity of the n-electrode formation layer 4 and the active layer 6 can be made good by forming an undoped nitride semiconductor layer 3 between the substrate 1 and the n-electrode formation layer 4 and forming the active layer 6 on an undoped semiconductor layer 5 which is formed on the n-electrode formation layer 4. |
