| 摘要 |
PROBLEM TO BE SOLVED: To provide a method suitable for forming the electrode of a compound semiconductor using lift-off method. SOLUTION: The method for forming an electrode comprises a step for forming an inorganic insulating film 3 on the major surface 2 of a compound semiconductor 1, a step for making an opening 4 for forming an electrode in the insulating film 3, a step for making a recess 5 of specified depth at a part corresponding to the opening 4 in the major surface 2 of a compound semiconductor 1, a step for forming an electrode material 6 of specified thickness above the recess 5 and the insulating film 3, a step for removing the insulating film 3 by etching, and a step for removing the electrode material 6 remaining on the insulating film 3. |
