| 摘要 |
PROBLEM TO BE SOLVED: To provide a good electric connection between a conductor such as an extraction electrode, etc., of a storage electrode of a capacitor of DRAM and a semiconductor region such as a source region, etc., of a selected transistor. SOLUTION: Between a conductor 56 and a semiconductor region 61, a thin film is formed which is 0.1 nm to 2 nm thick and has a different crystal structure from those of the conductor 56 and the semiconductor region 61. Due to the existence of the thin film 41, an epitaxial growth is prevented from starting from the interface between the conductor 56 and the semiconductor region 61, thereby reducing the generation and growth of crystal defects near the interface between the conductor 56 and the semiconductor region 69. Accordingly, leakage current in a pn-junction caused by crystal defects can be reduced. |
