| 摘要 |
PROBLEM TO BE SOLVED: To reduce the emitter-collector distance and power consumption of a semiconductor device by forming a plurality of openings through a silicon nitride film and oxide film, and providing polycrystalline silicon lead-out electrodes which are electrically connected to the base layer and collector layer of a silicon epitaxial layer and an emitter layer in the base layer. SOLUTION: After a diffused and buried layer 12 and element isolation trenches 13 are formed on the surface of a single-crystal silicon semiconductor substrate 11, a silicon nitride film 14 and a silicon oxide film 15 are successively deposited on the whole surface. Then first and second openings 17a and 17b are formed by etching off the laminated film of the oxide film 15 and nitride film 14. In addition, third and fourth openings 19a and 19b are formed through the silicon oxide film 15 at the positions corresponding to the openings 18a and 18b. Moreover, epitaxial layers 20a and 20b which become base layers later are grown in the first and second openings 17a and 17c, and polycrystalline silicon layers 21a and 21b which become base lead-out electrodes are grown in the third and fourth openings 19a and 19b.
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