| 摘要 |
PROBLEM TO BE SOLVED: To make a composition for forming low-permittivity insulating film containing the polymer of an alkoxy silane compound having a prescribed molecular weight distribution of a small capacity between wirings and a uniform particle size, by applying the composition to the surface of a substrate and drying the applied surface at a specific temperature, and then, baking the composition at another specific temperature. SOLUTION: A film having a thickness of 500 nm is formed on a substrate which is formed by forming a conductive film composed of aluminum, etc., on a silicon wafer by applying a composition for forming low-permittivity insulating film containing the oligomer of alkoxy silane having a prescribed molecular weight distribution to the substrate. Then, after the applied surface is dried at 50-200 deg.C, the composition is annealed (baked) at 300-500 deg.C. After annealing, a connecting hole is formed through the obtained oxide silicon film and the connecting hole is filled up with tungsten 3. The silicon oxide has a uniform particle size and no void is formed between the sidewall of the silicon oxide film and tungsten film. Therefore, a highly reliable insulating film can be obtained.
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