| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device in which the charge holding characteristic of a floating gate is substantially improved and to provide a manufacture method therefor. SOLUTION: A semiconductor substrate 17, a floating gate 11 formed on the semiconductor substrate 17 via a tunnel oxide film 16 and a control gate 13 formed on the floating gate 11 via an interlayer insulating film 12 are installed. The interlayer insulating film 12 acquires charges in a charge capture level.
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