| 摘要 |
A photonic semiconductor device (1) comprises an indium gallium aluminum nitride compound semiconductor layer on a ZnO buffer layer which is free of compound semiconductor constituents. A photonic semiconductor device comprises an InxGayAlzN compound semiconductor layer (x+y+z = 1, x = 0 to 1, y = 0 to 1, z = 0 to 1) provided on a ZnO buffer layer (3) which does not contain a constituent of the compound semiconductor and/or which is doped with one or more of B, Sc, Y, La, Ac, Ti, V, Nb, Ta, P, As, Sb and Bi.
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