| 摘要 |
PROBLEM TO BE SOLVED: To control the sheet-resistance value of a polysilicon resistor, when silicon technology is applied on a semiconductor device having the polysilicon line. SOLUTION: In this manufacturing method, a polysilicon layer constituting a gate electrode 11, having impurity concentration of 2×1020 cm-3 is formed on a P-type semiconductor substrate 1 via a gate oxide film 3, and polysilicon layer having the impurity concentration of 2×1021 cm-3 is formed via an element separating film 3. After a sidewall 15 and an N-type diffused layer 17 are formed, a Ti film 19 is deposited on the entire surface of the semiconductor substrate 1. After annealing process is performed, wet-etching processing is performed, and a Ti that has not reacted is removed. As silicide layer 21 is formed on the surface of the gate electrode 11, and the silicide layer 21 is not formed on the N-type diffused layer 17 on a polysilicon resistor element 13 having high concentration such as the impurity concentration of 2×1021 cm-3.
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