| 摘要 |
PROBLEM TO BE SOLVED: To suppress occurrence of void by depositing an epitaxial layer on one surface of a bond wafer of single crystal Si to form an epitaxial wafer, and polishing the surface of the epitaxial layer before pasted to a mirror surface of a base water through an Si oxide film. SOLUTION: With a base wafer 1 whose one surface is polished to a mirror surface and an epitaxial wafer (bond wafer) 2 where an epitaxial layer 3 is deposited on a mirror surface prepared, the epitaxial layer surface of the bond wafer 2 is polished at least to a surface roughness 0.3μm. The bond wafer 2 is oxidized in an oxidizing atmosphere to form an Si oxide film 4 on the surface. The bond wafer 2 and the mirror surface side of the base wafer 1 are pasted together with the epitaxial layer 3 in between under thermal process. After pasting, the epitaxial layer 3 of the oxidized bond wafer 2 is made thinner by cutting, polishing, and smart cut method, etc., according to required thickness.
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