| 摘要 |
PROBLEM TO BE SOLVED: To suppress leakage current, without increasing the manufacturing line cost, when a treatment for converting to an amorphous structure is applied to a semiconductor device having a p-type MOS transistor to form a silicide layer. SOLUTION: Holes are formed into a gate electrode 7p and n-type MOS transistor region, a photoresist 21 is formed to cover a p-type high-concn. diffusion region 9p, As+ is implanted at an implanting energy of 50 keV and does of 3×1014 cm-2 to form amorphous regions 23 on the surfaces of the gate electrodes 7n, 7p and n-type high concn. diffused region 9n, the photoresist 21 is removed, a Ti film 27 of 30 nm thick is deposited on the entire surface of an Si substrate and a heat treatment at the conditions of a treating temp. 25 deg.C for a treating time of 30 sec is applied to make the gate electrodes 7n, 7p and n-type and p-type high concn. diffused regions 9n, 9p silicide.
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