| 摘要 |
PURPOSE: A semiconductor memory device is provided to prevent an increase of a resistance of a main word line and a generation of a micro migration. CONSTITUTION: The semiconductor memory device having plural memory cells formed on a semiconductor substrate(30) and a plurality of conductive layers, the device comprises: plural main word lines(MWL0-MWL3) arranged in rows in a memory cell array and composed of a conductive layer formed on the semiconductor substrate(30); plural sub-word lines arranged in the rows therein and composed of a second conductive layer under the conductive layer; and a sub-word decoder circuit(SWD) disposed at a predetermined place on the main word lines, for driving the sub-word lines, wherein a pattern of the main word lines on which the sub-word decoder circuit(SWD) is formed, has such a shape that its end is divided into plural lines and the divided lines are merged into a line; and an island-shape pattern(40) electrically different from the main word lines in the divided region is formed by the conductive layer.
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