| 摘要 |
PROBLEM TO BE SOLVED: To efficiently attain electrical stabilization by the hydrogen heat treatment of a semiconductor device by a simple method. SOLUTION: A hydrogen annealing processing for electrically stabilizing a boundary face region between an insulating film such as a gate oxide film or a field oxide film and a semiconductor substrate, such as a silicon substrate is operated at first. Then, a wiring layer made to aluminum group metal is formed. Then, all processes after the hydrogen anneal processing are operated under a temperature, which is lower than the temperature of the hydrogen anneal processing. After the aluminum group wiring layer is formed, an alloying processing is operated under a temperature which is lower than that of the hydrogen annealing processing. Thus, alloying between the aluminum group wiring layer and a conductive layer (including a diffused layer) positioned in the lower layer of the aluminum group wiring layer is operated, so that the electrical resistance between them can be reduced. |
