METHOD FOR FORMING CAPACITOR OF SEMICONDUCTOR MEMORY DEVICE

摘要

PURPOSE: A method for forming a capacitor of a semiconductor memory device is provided to obtain a large capacitance in a predetermined cell area regardless of density of a polysilicon at a lower electrode of a capacitor. CONSTITUTION: The method for forming a capacitor of a semiconductor memory device comprises: a step to form a insulation layer(102) on a semiconductor substrate(100); a step form a contact hole(103) by etching the insulation layer until the surface of the semiconductor substrate(100) is exposed using a mask for forming the contact hole; a step to form a storage electrode(104) electrically connected to the semiconductor substrate(100)by filling the contact hole with conductive matter; and a step to form a metal film(106) of hemisphere on the surface of the storage electrode(104).