PAD FORMING METHOD FOR SELF-ALIGN INTRECONNECTION OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A pad forming method for the self-align interconnection of a semiconductor device is provided to make the stabilized interconnection possible. CONSTITUTION: The pad forming method for the interconnection comprises the steps of: forming a gate pattern(2) on the upper area of a joint field formed on the active field(1) of a semiconductor substrate; forming an insulating film on the whole surface of the substrate; forming an insulating film spacer(4B) along a side face of the gate pattern(2) on a wide field between the gate patterns and forming an insulating film plug(4A) on a narrow field between the gate patterns; forming a conduction layer(10) on the whole surface of the substrate; forming a self-align mask layer on the conduction layer(10); etching back the self-align mask layer; and forming a pad(6) for the interconnection by etching the exposed conduction layer(10).