METHOF FOR FORMING A GATE OF SEMICONDUCTOR DEVICES

摘要

PURPOSE: A forming method of a gate is provided to improve a reliability of devices due to a short channel effect by maximize a channel length formed at bottom of the gate. CONSTITUTION: The method comprises the steps of: forming a convex and concave in a semiconductor substrate(11) by selective etching the semiconductor substrate(11) and cleaning; sequentially depositing a gate oxide(12) and a gate metal(13) on the entire surface of the semiconductor substrate having the concave and convex; and forming a gate(14) at boundary region of the concave and convex by selective etching the gate metal(13) and the gate oxide(12).