METHOD FOR FORMING A CONTACT HOLE OF SEMICONDUCTOR DEVICES

摘要

PURPOSE: A forming method of contact holes is provided to prevent a degradation of junction property by removing an anti-reflection layer without damage of an active silicon layer. CONSTITUTION: The contact hole forming method comprises the steps of forming an anti-reflection coating(ARC) layer(190) on an interlayer dielectric(180) formed on a semiconductor substrate(105) or a conductive layer(114); forming contact holes(150,160); coating a photoresist on the resultant structure filled into the contact holes; removing the photoresist and the ARC layer(190) to expose the portion of the interlayer dielectric(180); and removing the photoresist pattern buried into the contact holes(150,160).