| 摘要 |
A method of forming a pattern using a phase shift mask which comprises applying at least first and second exposures. At least one exposure is conducted by using a phase shifting mask and at least the other exposure is conducted for compensating the amount of light at a phase shifting boundary of the phase shifting mask, the pattern having an inter-pattern distance on a substrate of less than 2.4x lambda /NA. The method of the present invention is applicable also to the formation of a pattern to which the existing phase shifting technique can not be applied, as well as to a pattern in which sub-patterns as the phase shifting portions can not be provided, whereby a pattern at a high resolution power can be obtained irrespective of the pattern shape. |
