FORMATION OF SILICON FILM, SILICON WIRING AND SILICON ELECTRODE AS WELL AS MANUFACTURE OF MOS TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To provide a method for forming a silicon wiring and a silicon electrode with a small number of steps. SOLUTION: A plasma, an excimer laser 4 or an ion beam is irradiated on a silicon oxide or nitride film to cut coupling of Si-O or Si-N. This causes oxygen or nitrogen to desorb, whereby silicon is precipitated on a surface layer. With use of the precipitated silicon, a silicon wiring and a silicon electrode can be formed without using photoresist.