发明名称 FLASH MEMORY AND SYSTEM LOADING THE SAME
摘要 PROBLEM TO BE SOLVED: To expand the storage capacity which a system can use without being accompanied with the increase in the number of chip enable signals required for control and the drop in access speed by switching a flash memory chip where the value of bit data in higher order than a bit positioned in the highest order coincides with the value of an allocated extension address into an accessible state. SOLUTION: A chip select circuit 130 of the flash memory 100 deals with the value of bit data of an inputted address signal as an extension address and selects a chip to which the extension address is allocated as an access object. A decoder 121 outputs control signals to NAND gates 122-125 by the value of the bit data of an address signal inputted through bins 112 and 113. The NAND gates 122-125 output signals corresponding to the control signals to a chip enable terminal and switch the chips 117-120 to which the extension addresses and address spaces are allocated into an accessible state.
申请公布号 JP2000003305(A) 申请公布日期 2000.01.07
申请号 JP19980168276 申请日期 1998.06.16
申请人 MITSUBISHI ELECTRIC CORP 发明人 MITANI HIDENORI
分类号 G06F12/06;G06F12/00;G11C8/12;G11C16/08;(IPC1-7):G06F12/06 主分类号 G06F12/06
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